Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application

We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with...

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Bibliographic Details
Published in:IEEE electron device letters 2014-01, Vol.35 (1), p.60-62
Main Authors: Woo, Jiyong, Lee, Daeseok, Cha, Euijun, Lee, Sangheon, Park, Sangsu, Hwang, Hyunsang
Format: Article
Language:English
Subjects:
access device
Applied sciences
Arrays
atom switch
Atomic measurements
Circuit properties
cross-point array memory
Electric, optical and optoelectronic circuits
Electrodes
Electronic circuits
Electronics
Exact sciences and technology
Ions
Materials
Resistance
Selector device
Switches
Switching, multiplexing, switched capacity circuits
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Summary:We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with which the filament was formed. For in-situ control of the device, a complementary atom switch concept was implemented. The proposed device presents another attractive selector among the field of bidirectional selectors with the unique attributes such as the extremely low leakage current and the exponentially increased conduction behavior.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2290120