The I−V characteristics of a graphene tunnel diode

Graphene is a 2D carbon allotrope in which electrons behave as massless Dirac fermions in a (1+2)-D relativistic space-time near the so-called Dirac points of the Brillouin zone of a honeycomb lattice, rendering very unusual electronic properties. Here, the physics of a graphene tunnel diode is expl...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2014-05, Vol.59, p.1-5
Main Authors: Saldaña Jimenez, Miguel, Dartora, C.A.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Dirac fermion
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Graphene
Materials science
Physics
Specific materials
Tunnel diode
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Summary:Graphene is a 2D carbon allotrope in which electrons behave as massless Dirac fermions in a (1+2)-D relativistic space-time near the so-called Dirac points of the Brillouin zone of a honeycomb lattice, rendering very unusual electronic properties. Here, the physics of a graphene tunnel diode is explored. The p–n configuration can be achieved by means of graphene doping. The transfer Hamiltonian method, incorporating the main features of relativistic tunneling of Dirac massless fermions in graphene permits the prediction of the I−V characteristics for graphene tunnel junctions in distinct configurations, and, in particular, the graphene diode.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2013.12.014