Highly conducting and wide-band transparent F-doped Zn1−xMgxO thin films for optoelectronic applications

• Published in: Journal of alloys and compounds 2014-07, Vol.602, p.294-299
• Main Authors: Guo, Y.M., Zhu, L.P., Jiang, J., Li, Y.G., Hu, L., Xu, H.B., Ye, Z.Z.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; F concentration; F-doped; Laser deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Pulsed laser deposition; Transparent conducting oxide; Wide-band; Zn1−xMgxO thin films
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2014.02.181

•F-doped Zn1−xMgxO thin films were deposited using pulsed laser deposition.•The optimal amount of F doping can decrease the resistivity and broaden bandgap of Zn1−xMgxO thin films.•Zn1−xMgxO thin films can be applied as transparent electrodes. Fluorine (F) doped Zn1−xMgxO thin films were deposited on quartz via pulsed laser deposition (PLD). F doping can decrease resistivity and broaden the bandgap of Zn1−xMgxO thin films as well when F concentration is less than 3%, otherwise F doping will backfire. The structural, electrical, and optical properties of these thin films were studied as a function of deposition temperatures. The Zn0.9Mg0.1OF0.03 thin films deposited at 350°C are optimal to be applied as transparent electrodes, taking both electrical and optical properties into account. Thin films have a low resistivity about 6.92×10−4Ωcm, with a carrier concentration of 5.26×1020cm−3, and a Hall mobility of 17.2cm2V−1s−1. The average optical transmittance is higher than 85% in the visible wavelength region.