Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation

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Bibliographic Details
Published in:IEEE electron device letters 2014-03, Vol.35 (3), p.390-392
Main Authors: BLASCO, Juli, GHENZI, Nestor, SUNE, Jordi, LEVY, Pablo, MIRANDA, Enrique
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Compound structure devices
Cross-disciplinary physics: materials science
rheology
Diodes
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Materials science
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum wires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switching, multiplexing, switched capacity circuits
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2297992