Low RC-Constant Perforated-Channel HFET

The novel HFET design using perforated channel region under the gate reduces drain and source parasitic resistances due to the current spreading effect in the source-gate and gate-drain regions. Demonstrated results for AlGaN/GaN HFET show that the RONCG time constant reduces around two times using...

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Bibliographic Details
Published in:IEEE electron device letters 2014-04, Vol.35 (4), p.449-451
Main Authors: Simin, Grigory S., Islam, Mirwazul, Gaevski, Mikhail, Deng, Jianyu, Gaska, Remis, Shur, Michael S.
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Applied sciences
Capacitance
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Gallium nitride
HEMT
HEMTs
HFET
Logic gates
MODFETs
Other multijunction devices. Power transistors. Thyristors
Power electronics, power supplies
power switch
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Description
Summary:The novel HFET design using perforated channel region under the gate reduces drain and source parasitic resistances due to the current spreading effect in the source-gate and gate-drain regions. Demonstrated results for AlGaN/GaN HFET show that the RONCG time constant reduces around two times using simple and robust perforated channel device processing. These results are especially important for new generations of power switching transistors.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2304726