High-Performance Multilevel Resistive Switching Gadolinium Oxide Memristors With Hydrogen Plasma Immersion Ion Implantation Treatment

Multilevel resistive switching (RS) of gadolinium oxide (Gd x O y ) memristors treated by hydrogen plasma immersion ion implantation (PIII) was investigated. Hydrogen ions were implanted at the Pt/Gd x O y interface to modify the oxygen-vacancy distribution, which was examined by the X-ray photoelec...

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Bibliographic Details
Published in:IEEE electron device letters 2014-04, Vol.35 (4), p.452-454
Main Authors: WANG, Jer-Chyi, HSU, Chih-Hsien, YE, Yu-Ren, LAI, Chao-Sung, AI, Chi-Fong, TSAI, Wen-Fa
Format: Article
Language:English
Subjects:
Applied sciences
Ash
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Gadolinium oxide
Hydrogen
Insulators
Integrated circuits
Integrated circuits by function (including memories and processors)
Ion implantation
Magnetic and optical mass memories
memristor
Memristors
Microelectronic fabrication (materials and surfaces technology)
oxygen vacancy
Plasma immersion ion implantation
Resistance
resistive switching
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Switches
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Summary:Multilevel resistive switching (RS) of gadolinium oxide (Gd x O y ) memristors treated by hydrogen plasma immersion ion implantation (PIII) was investigated. Hydrogen ions were implanted at the Pt/Gd x O y interface to modify the oxygen-vacancy distribution, which was examined by the X-ray photoelectron spectroscopy. After the hydrogen PIII treatment, a forming process is needed to operate the Gd x O y memristors and the RS mechanism is changed from Schottky emission to space-charge-limited conduction. Superior multilevel RS properties such as data retention for more than 10 4 s at 85°C, and sequentially cycling test for more than 10 3 times with a resistance ratio of approximately one order of magnitude between each state are realized, making the future high-density flash memory possible.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2304970