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Temperature Sensors to Measure the Central Frequency and 3 dB Bandwidth in mmW Power Amplifiers

This letter introduces a novel on-chip measurement technique for the determination of the central frequency and 3 dB bandwidth of a 60 GHz power amplifier (PA) by performing low frequency temperature measurements. The temperature sensor is embedded in the same silicon die as the PA, and placed in em...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2014-04, Vol.24 (4), p.272-274
Main Authors: Altet, J., Mateo, D., Gomez, D., Gonzalez Jimenez, J. L., Martineau, B., Siligaris, A., Aragones, X.
Format: Article
Language:English
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Summary:This letter introduces a novel on-chip measurement technique for the determination of the central frequency and 3 dB bandwidth of a 60 GHz power amplifier (PA) by performing low frequency temperature measurements. The temperature sensor is embedded in the same silicon die as the PA, and placed in empty spaces next to it. Results confirm that temperature sensors can be used as functional built-in testers which serve to reduce testing costs and enhance yield as part of self-healing strategies.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2013.2293668