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Temperature Sensors to Measure the Central Frequency and 3 dB Bandwidth in mmW Power Amplifiers
This letter introduces a novel on-chip measurement technique for the determination of the central frequency and 3 dB bandwidth of a 60 GHz power amplifier (PA) by performing low frequency temperature measurements. The temperature sensor is embedded in the same silicon die as the PA, and placed in em...
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Published in: | IEEE microwave and wireless components letters 2014-04, Vol.24 (4), p.272-274 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This letter introduces a novel on-chip measurement technique for the determination of the central frequency and 3 dB bandwidth of a 60 GHz power amplifier (PA) by performing low frequency temperature measurements. The temperature sensor is embedded in the same silicon die as the PA, and placed in empty spaces next to it. Results confirm that temperature sensors can be used as functional built-in testers which serve to reduce testing costs and enhance yield as part of self-healing strategies. |
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ISSN: | 1531-1309 2771-957X 1558-1764 2771-9588 |
DOI: | 10.1109/LMWC.2013.2293668 |