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Thin-film-transistor liquid-crystal display waste glass and nano-SiO2 as substitute sources for metakaolin-based geopolymer
Thin‐film‐transistor liquid‐crystal display (TFT‐LCD) waste glass can be used as a raw material in the production of geopolymer because of its amorphous and also contains relatively large amounts of silicon and aluminum. The effects of nano‐SiO2 (NS) addition levels (0%–3%) with 1% increments and th...
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Published in: | Environmental progress 2014-10, Vol.33 (3), p.947-955 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | Thin‐film‐transistor liquid‐crystal display (TFT‐LCD) waste glass can be used as a raw material in the production of geopolymer because of its amorphous and also contains relatively large amounts of silicon and aluminum. The effects of nano‐SiO2 (NS) addition levels (0%–3%) with 1% increments and the geopolymer replacement levels of TFT‐LCD waste glass (0%–40%) with 10% increments were analyzed quantitatively. The optimal geopolymer proportion was identified based on its mechanical characteristics and flexural strength. The geopolymer samples were also analyzed for changes in weight, and a thermogravimetric analyzer and 29Si magic‐angle spinning nuclear magnetic resonance to measure the short‐range network ordering. The results of this study indicated that the TFT‐LCD waste glass metakaolin (TWGM) geopolymer sample with 10% TFT‐LCD waste glass and 1% NS exhibited greater strength and lower porosity than other samples. Understanding these characteristics is necessary to identify the mechanical strength, thermal stability, and the fundamental structure of a geopolymer system. Applying NS to a geopolymer enhances its compactness, improves its uniformity, and increases its strength. These results show that 10% TFT‐LCD waste glass and 1% NS can be used as a partial substitute for metakaolin (MK) in geopolymer materials. © 2013 American Institute of Chemical Engineers Environ Prog, 33: 947–955, 2014 |
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ISSN: | 1944-7442 1944-7450 |
DOI: | 10.1002/ep.11868 |