InxGa1−xN performance as a band-gap-tunable photo-electrode in acidic and basic solutions

• Published in: Solar energy materials and solar cells 2014-11, Vol.130, p.36-41
• Main Authors: Juodkazytė, Jurga, Šebeka, Benjaminas, Savickaja, Irena, Kadys, Arūnas, Jelmakas, Edgaras, Grinys, Tomas, Juodkazis, Saulius, Juodkazis, Kȩstutis, Malinauskas, Tadas
• Format: Article
• Language: English
• Subjects: Alternative fuels. Production and utilization; Applied sciences; Chemistry; Direct energy conversion and energy accumulation; Electrical engineering. Electrical power engineering; Electrical power engineering; Electrochemistry; Energy; Exact sciences and technology; Fuels; General and physical chemistry; Hydrogen; Hydrogen production; InGaN solar cells; Natural energy; Photo-corrosion; Photoelectric conversion; Photoelectrochemistry. Electrochemiluminescence; Photovoltaic conversion; Solar cells. Photoelectrochemical cells; Solar energy; Surface and interface chemistry; Water splitting
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2014.06.033

Performance of InxGa1−xN photo-electrodes at concentrations of In ranging from 0 to 100 % was investigated in basic and acidic solutions under 1 Sun illumination. Photocorrosive effects of InxGa1−xN samples in aqueous solutions are revealed and strategies for a more efficient use of these electrodes are discussed. Formation of Ga2O3 phase and N2 under photoanodic conditions can explain the photo-corrosive effect. It is shown that the product of charge carrier density and mobility, n×μ, scales with the photo-current density in GaN. [Display omitted] •Photo-corrosion of InGaN under direct water splitting occurs via formation of Ga-oxide.•Hydrogen evolution is possible on Pt counter-electrode for a small up to 0.1 fraction of In.•Solar energy harvesting by changing the bandgap of InGaN controlled by In concentration.