Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at VDD = 0.4 V

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Bibliographic Details
Main Authors: MAIORANO, P, GNANI, E, GNUDI, A, REGGIANI, S, BACCARANI, G
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Compound structure devices
Design. Technologies. Operation analysis. Testing
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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Description
Summary:
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2014.06.020