A new method of determining the stress state in microelectronic materials

Introduces a new technique for determining the stress in microelectronic materials by combining photoelasticity and Fourier analysis. The approach uses a continuously rotating analyser to determine the photoelastic parameters from a Fourier analysis of the measured emerging light intensity. A (111)...

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Bibliographic Details
Published in:Measurement science & technology 1996-01, Vol.7 (1), p.102-105, Article 102
Main Authors: Liang, Hancheng, Zhao, Shounan, Chin, K Ken
Format: Article
Language:English
Subjects:
Circuits and circuit components
Circuits ans circuit components
Electrical and electronic components, instruments and techniques
Exact sciences and technology
Instruments for strain, force and torque
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Mechanical instruments, equipment and techniques
Physics
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Summary:Introduces a new technique for determining the stress in microelectronic materials by combining photoelasticity and Fourier analysis. The approach uses a continuously rotating analyser to determine the photoelastic parameters from a Fourier analysis of the measured emerging light intensity. A (111) silicon wafer sample illustrates the application of the technique. (Original abstract-amended)
ISSN:0957-0233
1361-6501
DOI:10.1088/0957-0233/7/1/014