Spatio-temporal dynamics of gain-guided semiconductor laser arrays

• Published in: IEEE journal of quantum electronics 1996-02, Vol.32 (2), p.257-276
• Main Authors: Martin-Regalado, J., Balle, S., Abraham, N.B.
• Format: Article
• Language: English
• Subjects: Context modeling; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Laser modes; Laser noise; Lasers; Maxwell equations; Optical arrays; Optical coupling; Optics; Physics; Pump lasers; Semiconductor laser arrays; Semiconductor lasers; laser diodes; Solid modeling; Spontaneous emission
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/3.481873

A continuous model based on the coupled field-matter Maxwell-Bloch equations for a two-level homogeneously broadened single mode laser is developed. The model includes a Langevin formulation to model thermal and spontaneous emission noises and accounts for carrier diffusion, optical field diffraction and current spreading. Our model is flexible enough to simulate any gain-guided longitudinally uniform laser geometry and is applied to both a single-stripe and a four-stripe gain-guided semiconductor lasers where the influence of the injection current, the interstripe distance and carrier diffusion is discussed within the context of the laser dynamics. We show that an array operating with quasi-independent stripes may be achieved at low pumps and larger interstripe distances. However, as injection current is increased or the interstripe distance is decreased, the device passes through a variety of dynamical instabilities which can be analyzed in the context of lateral cavity modes. Moreover, we also show that the array dynamics is strongly influenced by carrier diffusion which may also lead to different thresholds for each element of the array.