Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

In this paper is reported a new physically based Monte Carlo model and simulator for accurate simulation of arsenic ion implantation in (100) single-crystal silicon. A new damage generation model and an improved electronic stopping power model have been developed. These new physically based models g...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on semiconductor manufacturing 1996-02, Vol.9 (1), p.49-58
Main Authors: Shyh-Horng Yang, Morris, S.J., Shiyang Tian, Parab, K.B., Tasch, A.F.
Format: Article
Language:English
Subjects:
Applied sciences
Crystallization
Doping profiles
Electronics
Exact sciences and technology
Implants
Ion implantation
Microelectronic fabrication (materials and surfaces technology)
Monte Carlo methods
Power generation
Predictive models
Rapid thermal processing
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
Silicon
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper is reported a new physically based Monte Carlo model and simulator for accurate simulation of arsenic ion implantation in (100) single-crystal silicon. A new damage generation model and an improved electronic stopping power model have been developed. These new physically based models greatly improve the capability for predicting arsenic as-implanted profiles. This new Monte Carlo model predicts very well the detailed profile dependence on the implant tilt and rotation angles as well as on the implant dose and energy over the energy range 15-180 keV.
ISSN:0894-6507
1558-2345
DOI:10.1109/66.484282