Ka-band power performance of InP/InGaAs/InP double heterojunction bipolar transistors

We report for the first time the Ka-band power performance of InP/InGaAs/InP DHBTs. A 2×10 μm 2 common-emitter transistor delivered a continuous wave (CW) output power of 19.1 mW (1.91 W/mm power density), an associated gain of 5.3 dB, and a power-added efficiency (PAE) of 35.5% at 30 GHz. The maxim...

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Bibliographic Details
Published in:IEEE microwave and guided wave letters 1996-03, Vol.6 (3), p.129-131
Main Authors: Chau, H.-F., Tserng, H.-Q., Beam, E.A.
Format: Article
Language:English
Subjects:
Applied sciences
Breakdown voltage
Circuit properties
DH-HEMTs
Double heterojunction bipolar transistors
Electric, optical and optoelectronic circuits
Electronics
Etching
Exact sciences and technology
Frequency
Gain
Gold
Indium gallium arsenide
Indium phosphide
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Power generation
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Summary:We report for the first time the Ka-band power performance of InP/InGaAs/InP DHBTs. A 2×10 μm 2 common-emitter transistor delivered a continuous wave (CW) output power of 19.1 mW (1.91 W/mm power density), an associated gain of 5.3 dB, and a power-added efficiency (PAE) of 35.5% at 30 GHz. The maximum output power density was 2.34 W/mm and the peak associated gain was 6.6 dB. Under common-base operation, the maximum associated gain increased to 15.2 dB, but the maximum output power density and peak PAE dropped to 1.91 W/mm and 24.5%, respectively, at the same frequency.
ISSN:1051-8207
1558-2329
DOI:10.1109/75.481089