The role of gas-phase in the laser etching of Cu by CCl4

In the laser etching of surfaces, the gas-surface chemical reaction used may be spontaneous or induced by a laser-gas interaction. We put into evidence a third mechanism allowing to use gas molecules that interact directly neither with the surface nor with the laser but that contains reactive atoms.

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Bibliographic Details
Published in:Applied surface science 1996-04, Vol.96-98, p.453-456
Main Authors: De´barre, D., Aliouchouche, A., Boulmer, J., Bourguignon, B., Budin, J.P.
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Metals. Metallurgy
Physics
Surface cleaning, etching, patterning
Surface treatments
Online Access:Get full text
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Description
Summary:In the laser etching of surfaces, the gas-surface chemical reaction used may be spontaneous or induced by a laser-gas interaction. We put into evidence a third mechanism allowing to use gas molecules that interact directly neither with the surface nor with the laser but that contains reactive atoms.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(95)00457-2