Synchrotron-radiation-induced deposition of etch-proctecting film on Si in CF4 plasma

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Bibliographic Details
Published in:Japanese journal of applied physics 1996, Vol.35 (2A), p.765-766
Main Authors: SHAO, C, MORITA, S, SOGA, T, INANAMI, R, HATTORI, S
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Ion and electron beam-assisted deposition
ion plating
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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ISSN:0021-4922
1347-4065