Strain characterization of Ge1-xSix and heavily B-doped Ge layers on Ge(001) by two-dimensional reciprocal space mapping

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Bibliographic Details
Published in:Journal of crystal growth 1996-10, Vol.167 (3-4), p.495-501
Main Authors: RADAMSON, H. H, JOELSSON, K. B, NI, W.-X, BIRCH, J, SUNDGREN, J.-E, HULTMAN, L, HANSSON, G. V
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
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ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(96)00294-1