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1.5- mu m InGaAs/InAlGaAs quantum-well microdisk lasers

Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method used to fabricate the laser structure is discussed. Lasers 20 mu m in diameter lased with single mode at 1.5- mu m wavelength when optically pumped by a pulsed argon-ion laser...

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Bibliographic Details
Published in:IEEE photonics technology letters 1993-12, Vol.5 (12), p.1353-1355
Main Authors: Chu, D.Y., Chin, M.K., Sauer, N.J., Xu, Z., Chang, T.Y., Ho, S.T.
Format: Article
Language:English
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Summary:Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method used to fabricate the laser structure is discussed. Lasers 20 mu m in diameter lased with single mode at 1.5- mu m wavelength when optically pumped by a pulsed argon-ion laser at 80 K.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.262538