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1.5- mu m InGaAs/InAlGaAs quantum-well microdisk lasers
Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method used to fabricate the laser structure is discussed. Lasers 20 mu m in diameter lased with single mode at 1.5- mu m wavelength when optically pumped by a pulsed argon-ion laser...
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Published in: | IEEE photonics technology letters 1993-12, Vol.5 (12), p.1353-1355 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method used to fabricate the laser structure is discussed. Lasers 20 mu m in diameter lased with single mode at 1.5- mu m wavelength when optically pumped by a pulsed argon-ion laser at 80 K.< > |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/68.262538 |