High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors

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Bibliographic Details
Published in:IEEE photonics technology letters 1994-07, Vol.6 (7), p.811-813
Main Authors: I-HSING TAN, DUDLEY, J. J, BABIC, D. I, COHEN, D. A, YOUNG, B. D, HU, E. L, BOWERS, J. E, MILLER, B. I, KOREN, U, YOUNG, M. G
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Imaging detectors and sensors
Optical elements, devices, and systems
Optics
Optoelectronic devices
Photodetectors (including infrared and CCD detectors)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:1041-1135
1941-0174
DOI:10.1109/68.311462