High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure

Monolithic photoreceivers, using the base-collector junction of an InP/InGaAs phototransistor structure for a p-i-n photodetector, have been fabricated for the first time. Bandwidths as high as 3 GHz and bit rates as high as 5 Gb/s, with sensitivities of -22.5 dBm and -21.5 dBm for light focused on...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 1993-11, Vol.5 (11), p.1316-1318
Main Authors: Chandrasekhar, S., Lunardi, L.M., Gnauck, A.H., Hamm, R.A., Qua, G.J.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Epitaxial layers
Exact sciences and technology
Gold
Heterojunction bipolar transistors
Indium gallium arsenide
Indium phosphide
Integrated optoelectronics. Optoelectronic circuits
Optical and optoelectronic circuits
Optoelectronic devices
Photodetectors
Phototransistors
PIN photodiodes
Preamplifiers
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Monolithic photoreceivers, using the base-collector junction of an InP/InGaAs phototransistor structure for a p-i-n photodetector, have been fabricated for the first time. Bandwidths as high as 3 GHz and bit rates as high as 5 Gb/s, with sensitivities of -22.5 dBm and -21.5 dBm for light focused on the p-i-n or on the first stage transistor of the preamplifier, respectively, have been achieved. These results represent the highest operating speed demonstrated for any phototransistor-based receiver.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.250055