On the reaction scheme for Ti/TiN chemical vapor deposition (CVD) process using TiCl4

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Bibliographic Details
Published in:Japanese journal of applied physics 1995, Vol.34 (3A), p.L326-L329
Main Authors: MICHIZUKI, Y, OKAMOTO, Y, ISHITANI, A, HIROSE, K, TAKADA, T
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Online Access:Get full text
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.34.L326