Low temperature chemical vapor deposition of high quality SiO2 film using helicon plasma source

Saved in:
Bibliographic Details
Published in:Japanese journal of applied physics 1995, Vol.34 (2B), p.762-766
Main Authors: NISHIMOTO, Y, TOKUMASU, N, MAEDA, K
Format: Article
Language:English
Subjects:
Applied sciences
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Lithography, masks and pattern transfer
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Microelectronic fabrication (materials and surfaces technology)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.34.762