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Low temperature chemical vapor deposition of high quality SiO2 film using helicon plasma source

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Published in:	Japanese journal of applied physics 1995, Vol.34 (2B), p.762-766
Main Authors:	NISHIMOTO, Y, TOKUMASU, N, MAEDA, K
Format:	Article
Language:	English
Subjects:	Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Lithography, masks and pattern transfer Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page	766
container_issue	2B
container_start_page	762
container_title	Japanese journal of applied physics
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creator	NISHIMOTO, Y TOKUMASU, N MAEDA, K
description
doi_str_mv	10.1143/JJAP.34.762
format	article
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ispartof	Japanese journal of applied physics, 1995, Vol.34 (2B), p.762-766
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source	IOPscience journals; Institute of Physics
subjects	Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Lithography, masks and pattern transfer Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title	Low temperature chemical vapor deposition of high quality SiO2 film using helicon plasma source
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