Low threshold InAlGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxy

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Bibliographic Details
Published in:Solid-state electronics 1995-05, Vol.38 (5), p.1105-1106
Main Authors: CHYI, J.-I, GAU, J.-H, SHIEH, J.-L, PAN, J.-W, CHAN, Y.-J, HONG, J.-W, HUANG, M.-F
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(95)98682-S