High-power, high-temperature operation of GaInAsSb-AlGaAsSb ridge-waveguide lasers emitting at 1.9 μm

Ridge-waveguide lasers emitting at /spl sim/1.9 μm have been fabricated from a multiple-quantum-well heterostructure with an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. At room temperature, single-ended cw output power as high as 100 mW has been obtained. The maximum c...

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Bibliographic Details
Published in:IEEE photonics technology letters 1995-03, Vol.7 (3), p.281-283
Main Authors: Choi, H.K., Turner, G.W., Connors, M.K., Fox, S., Dauga, C., Dagenais, M.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitive sensors
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gas lasers
Lasers
Optical materials
Optics
Optoelectronic devices
Physics
Power generation
Pump lasers
Quantum well lasers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
Substrates
Temperature
Threshold current
Waveguide lasers
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Summary:Ridge-waveguide lasers emitting at /spl sim/1.9 μm have been fabricated from a multiple-quantum-well heterostructure with an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. At room temperature, single-ended cw output power as high as 100 mW has been obtained. The maximum cw operating temperature is 130/spl deg/C, with a characteristic temperature of 85 K between 20 and 80/spl deg/C.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.372746