Breakdown mechanisms in pseudomorphic InAlAs/InxGa1-xAs high electron mobility transistors on InP. II: On-state

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Bibliographic Details
Published in:Japanese journal of applied physics 1995, Vol.34 (4A), p.1805-1808
Main Authors: DICKMANN, J, SCHILDBERG, S, RIEPE, K, MAILE, B. E, SCHURR, A, GEYER, A, NAROZNY, P
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.1805