A 550 V Isolated Channel Base Resistance Controlled Thyristor (ICBRT)

In this paper we report a 550 V Isolated Channel Base Resistance Controlled Thyristor (ICBRT), which incorporates a heavily doped p-type diffusion at the edges of the p-base of the conventional Base Resistance Controlled Thyristor (BRT) to improve its turn-off capability. The desirable gate controll...

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Bibliographic Details
Published in:IEEE electron device letters 1995-06, Vol.16 (6), p.283-285
Main Authors: Parthasarathy, V., Bhalla, A., Chow, T.P.
Format: Article
Language:English
Subjects:
Applied sciences
Cathodes
Current density
Electric resistance
Electronics
Electrons
Exact sciences and technology
Implants
Insulated gate bipolar transistors
Modeling
MOSFET circuits
Numerical simulation
Other multijunction devices. Power transistors. Thyristors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thyristors
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Summary:In this paper we report a 550 V Isolated Channel Base Resistance Controlled Thyristor (ICBRT), which incorporates a heavily doped p-type diffusion at the edges of the p-base of the conventional Base Resistance Controlled Thyristor (BRT) to improve its turn-off capability. The desirable gate controlled turn-on and turn-off features of the BRT are retained in this new device along with separate turn-on and turn-off regions. A 70% improvement in the maximum controllable current density during resistive turn-off over the conventional BRT has been demonstrated in numerical simulations and experimental measurements.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.790736