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Template-based MOSFET device model
This paper describes a novel method of representing the three-dimensional MOSFET current table. The method utilizes a template constructed from a drain sweep curve. This template is compressed/expanded and scaled to match all other possible drain sweep curves. This modeling technique provides more t...
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Published in: | IEEE transactions on computer-aided design of integrated circuits and systems 1995-08, Vol.14 (8), p.924-933 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This paper describes a novel method of representing the three-dimensional MOSFET current table. The method utilizes a template constructed from a drain sweep curve. This template is compressed/expanded and scaled to match all other possible drain sweep curves. This modeling technique provides more than a 10x reduction in storage space requirements, relative to a true three-dimensional table, with little loss in accuracy. It will also be shown that the method can be extended to model the intrinsic charge surfaces.< > |
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ISSN: | 0278-0070 1937-4151 |
DOI: | 10.1109/43.402493 |