Room-temperature deposition of SiNx using ECR-PECVD for III/V semiconductor microelectronics in lift-off technique

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Published in:Journal of non-crystalline solids 1995-07, Vol.187, p.334-339
Main Authors: WIERSCH, A, HEEDT, C, SCHNEIDERS, S, TILDERS, R, BUCHALI, F, KUEBART, W, PROST, W, TEGUDE, F. J
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 339
container_issue
container_start_page 334
container_title Journal of non-crystalline solids
container_volume 187
creator WIERSCH, A
HEEDT, C
SCHNEIDERS, S
TILDERS, R
BUCHALI, F
KUEBART, W
PROST, W
TEGUDE, F. J
description
doi_str_mv 10.1016/0022-3093(95)00160-3
format article
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ispartof Journal of non-crystalline solids, 1995-07, Vol.187, p.334-339
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1873-4812
language eng
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source ScienceDirect Freedom Collection 2022-2024
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Room-temperature deposition of SiNx using ECR-PECVD for III/V semiconductor microelectronics in lift-off technique
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