Operating characteristics of InGaAs-GaAs MQW hetero-nipi waveguide modulators

We report frequency response measurements of optical MQW nipi waveguide modulators, observing a -3-dB bandwidth as high as 110 MHz. These devices have only 900-/spl Aring/-thick intrinsic regions, and thus can achieve very high fields with modest reverse bias voltages. We also measured absorption mo...

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Bibliographic Details
Published in:IEEE photonics technology letters 1995-08, Vol.7 (8), p.878-880
Main Authors: Koehler, S.D., Garmire, E.M., Kost, A.R., Yap, D., Docter, D.P., Hasenberg, T.C.
Format: Article
Language:English
Subjects:
Absorption
Bandwidth
Exact sciences and technology
Frequency measurement
Frequency response
Fundamental areas of phenomenology (including applications)
Optical elements, devices, and systems
Optical modulation
Optical processors, correlators, and modulators
Optical waveguides
Optics
Phase measurement
Phase modulation
Physics
Quantum well devices
Voltage
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Summary:We report frequency response measurements of optical MQW nipi waveguide modulators, observing a -3-dB bandwidth as high as 110 MHz. These devices have only 900-/spl Aring/-thick intrinsic regions, and thus can achieve very high fields with modest reverse bias voltages. We also measured absorption modulation (32 dB) and a phase change figure of merit as low as V/sub /spl pi///spl times/L=0.8 V mm at a detuning of 115 meV below the photoluminescence peak. We compare ion-implanted selective contacts with traditional selective metal contacts.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.404001