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Monolithic 2-18 GHz low loss, on-chip biased PIN diode switches
Two state-of-the-art monolithic GaAs PIN diode switches have been designed, fabricated and tested. These single-pole double-throw (SPDT) switches exhibit insertion losses of 1.15/spl plusmn/0.15 dB over a 2-18 GHz band, which is an unprecedented performance in loss and flatness for monolithic wideba...
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Published in: | IEEE transactions on microwave theory and techniques 1995-02, Vol.43 (2), p.250-256 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Two state-of-the-art monolithic GaAs PIN diode switches have been designed, fabricated and tested. These single-pole double-throw (SPDT) switches exhibit insertion losses of 1.15/spl plusmn/0.15 dB over a 2-18 GHz band, which is an unprecedented performance in loss and flatness for monolithic wideband switches incorporating on-chip bias networks. Isolation and return loss are greater than 43 dB and 12 dB, respectively, and the input port power handling is 23 dBm at 1-dB insertion loss compression. These performance characteristics were measured at a nominal bias setting of -8 V, which corresponds to 3.7 mA of series diode bias current and a total dc power consumption of 55 mW. The input power at the third-order interception is 40 dBm. The switches can handle up to 31 dBm (1.25 W) at a higher bias of -18 V and 9.3 mA.< > |
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ISSN: | 0018-9480 1557-9670 |
DOI: | 10.1109/22.348081 |