Loading…

Monolithic 2-18 GHz low loss, on-chip biased PIN diode switches

Two state-of-the-art monolithic GaAs PIN diode switches have been designed, fabricated and tested. These single-pole double-throw (SPDT) switches exhibit insertion losses of 1.15/spl plusmn/0.15 dB over a 2-18 GHz band, which is an unprecedented performance in loss and flatness for monolithic wideba...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1995-02, Vol.43 (2), p.250-256
Main Authors: Jar-Lon Lee, Zych, D., Reese, E., Drury, D.M.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Two state-of-the-art monolithic GaAs PIN diode switches have been designed, fabricated and tested. These single-pole double-throw (SPDT) switches exhibit insertion losses of 1.15/spl plusmn/0.15 dB over a 2-18 GHz band, which is an unprecedented performance in loss and flatness for monolithic wideband switches incorporating on-chip bias networks. Isolation and return loss are greater than 43 dB and 12 dB, respectively, and the input port power handling is 23 dBm at 1-dB insertion loss compression. These performance characteristics were measured at a nominal bias setting of -8 V, which corresponds to 3.7 mA of series diode bias current and a total dc power consumption of 55 mW. The input power at the third-order interception is 40 dBm. The switches can handle up to 31 dBm (1.25 W) at a higher bias of -18 V and 9.3 mA.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.348081