Report on a joint BIPM-EUROMET project for the fabrication of QHE samples by the LEP

The quantum Hall effect (QHE) samples fabricated by LEP according to specifications intended to optimize their usefulness in metrology are described. Their measured characteristics, notably carrier density, carrier mobility at zero magnetic field, dependence of the quantized resistance on temperatur...

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Bibliographic Details
Published in:IEEE transactions on instrumentation and measurement 1993-04, Vol.42 (2), p.264-268
Main Authors: Piquemal, F., Geneves, G., Delahaye, F., Andre, J.-P., Patillon, J.-N., Frijlink, P.
Format: Article
Language:English
Subjects:
Applied sciences
Charge carrier density
Current measurement
Density measurement
Electric resistance
Electric variables measurement
Electrical resistance measurement
Electronics
Exact sciences and technology
Fabrication
Hall effect
Interfaces
Magnetic field measurement
Metrology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Description
Summary:The quantum Hall effect (QHE) samples fabricated by LEP according to specifications intended to optimize their usefulness in metrology are described. Their measured characteristics, notably carrier density, carrier mobility at zero magnetic field, dependence of the quantized resistance on temperature, measuring current, and the quality of electrical contacts, are reported.< >
ISSN:0018-9456
1557-9662
DOI:10.1109/19.278562