On the Richardson constant of intimate metal-GaAs (111)B Schottky diodes growtn by molecular beam epitaxy

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Bibliographic Details
Published in:Journal of applied physics 1993, Vol.74 (10), p.6256-6260
Main Authors: PILKINGTON, S. J, MISSOUS, M, WOOLF, D. A
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface double layers, schottky barriers, and work functions
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ISSN:0021-8979
1089-7550