Measurement and modeling of self-heating in SOI nMOSFET's

Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried ox...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-01, Vol.41 (1), p.69-75
Main Authors: Su, L.T., Chung, J.E., Antoniadis, D.A., Goodson, K.E., Flik, M.I.
Format: Article
Language:English
Subjects:
Applied sciences
Cooling
Electrical resistance measurement
Electronics
Exact sciences and technology
Integrated circuit interconnections
Mechanical engineering
MOSFET circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon compounds
Silicon on insulator technology
Temperature measurement
Thermal conductivity
Thickness measurement
Transistors
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Summary:Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. Under dynamic circuit conditions, the channel temperatures are much lower than predicted from the static power dissipation. This work provides the foundation for the extraction of device modeling parameters for dynamic operation (at constant temperature) from static device characterization data (where temperature varies widely). Self-heating does not greatly reduce the electromigration reliability of SOI circuits, but might influence SOI device design, e.g., requiring a thinner buried oxide layer for particular applications and scaled geometries.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.259622