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Properties of highly conducting nitrogen-plasma-doped ZnSe:N thin films : Wide-Bandgap II-VI semiconductors for blue/green light emitters
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| Published in: | Journal of electronic materials 1994, Vol.23 (3), p.251-254 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| Online Access: | Get full text |
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| container_end_page | 254 |
| container_issue | 3 |
| container_start_page | 251 |
| container_title | Journal of electronic materials |
| container_volume | 23 |
| creator | BOWERS, K. A YU, Z GOSSETT, K. J COOK, J. W SCHETZINA, J. F |
| description | |
| format | article |
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| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 1994, Vol.23 (3), p.251-254 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_pascalfrancis_primary_4090944 |
| source | Springer Online Journal Archives (Through 1996) |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Other nonmetals Other semiconductors Other solid inorganic materials Photoluminescence Physics |
| title | Properties of highly conducting nitrogen-plasma-doped ZnSe:N thin films : Wide-Bandgap II-VI semiconductors for blue/green light emitters |
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