A detailed investigation of heterojunction transport using a rigorous solution to the Boltzmann equation

A detailed study of electron transport across an Np/sup +/ heterojunction diode is performed using a rigorous numerical solution to the Boltzmann equation. Results are presented for the I-V characteristic and the average electron energy, temperature, energy flux, and quasi-Fermi levels as a function...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-04, Vol.41 (4), p.592-600
Main Authors: Stettler, M.A., Lundstrom, M.S.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Boltzmann equation
Boundary conditions
Diodes
Distribution functions
Electronics
Electrons
Exact sciences and technology
Frequency
Heterojunctions
Hydrodynamics
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thermionic emission
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Summary:A detailed study of electron transport across an Np/sup +/ heterojunction diode is performed using a rigorous numerical solution to the Boltzmann equation. Results are presented for the I-V characteristic and the average electron energy, temperature, energy flux, and quasi-Fermi levels as a function of position. Comparison with a simple analytical treatment shows good agreement for the current and quasi-Fermi level splitting versus bias. The distribution functions near the heterojunction interface are also investigated and found to be distinctly non-Maxwellian. Finally, the results are used to examine the boundary conditions of hydrodynamic quantities at the heterojunction.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.278515