Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance

The impulse and square-wave input response of different GaAs metal-semiconductor-metal photodetector (MSM) designs are theoretically examined using a two dimensional drift-diffusion numerical calculation with a thermionic-field emission boundary condition model for the heterojunctions. The rise time...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-07, Vol.41 (7), p.1112-1119
Main Authors: Salem, A.F., Smith, A.W., Brennan, K.F.
Format: Article
Language:English
Subjects:
Absorption
Applied sciences
Boundary conditions
Detectors
Electronics
Exact sciences and technology
Fingers
Gallium arsenide
Heterojunctions
Optoelectronic devices
Photodetectors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
Solid-State Physics
Substrates
Thermionic emission
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Summary:The impulse and square-wave input response of different GaAs metal-semiconductor-metal photodetector (MSM) designs are theoretically examined using a two dimensional drift-diffusion numerical calculation with a thermionic-field emission boundary condition model for the heterojunctions. The rise time and the fall time of the output signal current are calculated for a simple GaAs, epitaxially grown, MSM device as well as for various double-heterostructure barrier devices. The double heterostructure devices consist of an AlGaAs layer sandwiched between the top GaAs active absorption layer and the bottom GaAs substrate. The effect of the depth of the AlGaAs layer on the speed and responsivity of the MSM devices is examined. It is found that there is an optimal depth, at fixed applied bias, of the AlGaAs layer within the structure that provides maximum responsivity at minimal compromise in speed.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.293337