Effect of lattice-mismatched growth on InAs/AlSb resonant-tunneling diodes

Nominally identical InAs/AlSb resonant-tunneling diodes are fabricated on InAs and GaAs substrates to ascertain the effect of dislocations on the resonant-tunneling process. Although the diode on the GaAs substrate had a much higher dislocation density, as evidenced by X-ray diffraction measurements...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-06, Vol.41 (6), p.879-882
Main Authors: Brown, E.R., Eglash, S.J., Turner, G.W., Parker, C.D., Pantano, J.V., Calawa, D.R.
Format: Article
Language:English
Subjects:
Applied sciences
Circuits
Density measurement
Diodes
Doping profiles
Electronics
Exact sciences and technology
Gallium arsenide
Laboratories
Lattices
Resonant tunneling devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Temperature
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Summary:Nominally identical InAs/AlSb resonant-tunneling diodes are fabricated on InAs and GaAs substrates to ascertain the effect of dislocations on the resonant-tunneling process. Although the diode on the GaAs substrate had a much higher dislocation density, as evidenced by X-ray diffraction measurements, it displayed only a small decrease in peak-to-valley current ratio.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.293296