Physics-based expressions for the nonlinear capacitances of the MESFET equivalent circuit

In this paper, we present a simple physical determination of the nonlinear capacitance parameters (C/sub gdo/ and C/sub gso/) of the MESFET equivalent circuit. Semiempirical models such as the Curtice and Statz-Pucel models, in conjunction with these physics-based expressions, are a fast tool for CA...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1994-03, Vol.42 (3), p.403-406
Main Authors: D'Agostino, S., Betti-Berutto, A.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance
Design automation
Electronics
Equations
Equivalent circuits
Exact sciences and technology
Integrated circuit modeling
MESFET circuits
Microwave devices
Microwave integrated circuits
Parameter extraction
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Statistics
Transistors
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Summary:In this paper, we present a simple physical determination of the nonlinear capacitance parameters (C/sub gdo/ and C/sub gso/) of the MESFET equivalent circuit. Semiempirical models such as the Curtice and Statz-Pucel models, in conjunction with these physics-based expressions, are a fast tool for CAD of microwave integrated circuit simulation, saving the designer the tedious and sometimes difficult process of parameter extraction and providing a better estimate of device statistics. Using the equations obtained in this work, a submicron gate length MESFET has been simulated and theoretical results are in good agreement with the experimental measurements.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.277433