Reliability of GaAs-based semiconductor diode lasers : 0.6-0.0 μm

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1993, Vol.29 (6), p.2058-2067
Main Authors: YELLEN, S. L, SHEPARD, A. H, DALBY, R. J, BAUMANN, J. A, SERREZE, H. B, GUIDO, T. S, SOLTZ, R, BYSTROM, K. J, HARDING, C. M, WATERS, R. G
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
Online Access:Get full text
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ISSN:0018-9197
1558-1713