In situ electronic transport measurement as a tool for investigating the 2D doping in metal-C60 interfacial systems

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Published in:Journal of physics. Condensed matter 1994-10, Vol.6 (41), p.L631-L636
Main Authors: Zhao, W B, Chen, J, Wu, K, Zhang, J L, Li, C Y, Yin, D L, Gu, Z N, Zhou, H, Jin, Z X
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Metal-nonmetal contacts
Physics
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container_end_page L636
container_issue 41
container_start_page L631
container_title Journal of physics. Condensed matter
container_volume 6
creator Zhao, W B
Chen, J
Wu, K
Zhang, J L
Li, C Y
Yin, D L
Gu, Z N
Zhou, H
Jin, Z X
description
doi_str_mv 10.1088/0953-8984/6/41/002
format article
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issn 0953-8984
1361-648X
language eng
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source Institute of Physics:Jisc Collections:IOP Publishing Journal Archive 1874-1998 (access period 2020 to 2024); Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Metal-nonmetal contacts
Physics
title In situ electronic transport measurement as a tool for investigating the 2D doping in metal-C60 interfacial systems
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