Gettering properties of PrO2 in In0.5.Ga0.47As LPE growth

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Published in:Journal of crystal growth 1991, Vol.110 (4), p.862-866
Main Authors: NOVAK, J, HASENOHRL, S, KULIFFAYOVA, M, OSWALD, J
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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container_end_page 866
container_issue 4
container_start_page 862
container_title Journal of crystal growth
container_volume 110
creator NOVAK, J
HASENOHRL, S
KULIFFAYOVA, M
OSWALD, J
description
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ispartof Journal of crystal growth, 1991, Vol.110 (4), p.862-866
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language eng
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source ScienceDirect: Physics General Backfile; ScienceDirect: Materials Science Backfile
subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Gettering properties of PrO2 in In0.5.Ga0.47As LPE growth
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