Extraction of interface state density profile from the maximums of the parallel conductance versus applied gate bias curves Gp(Va), using the conductance technique

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Bibliographic Details
Published in:Review of scientific instruments 1992, Vol.63 (9), p.4189-4191
Main Authors: PAPADAS, C, MORFOULI, P, GHIBAUDO, G, PANANAKAKIS, G
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
Online Access:Get full text
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ISSN:0034-6748
1089-7623
DOI:10.1063/1.1143232