N vacancies in AlxGa1-xN

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Published in:Journal of applied physics 1992-11, Vol.72 (9), p.4130-4133
Main Authors: JENKINS, D. W, DOW, J. D, MIN-HSIUNG TSAI
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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container_end_page 4133
container_issue 9
container_start_page 4130
container_title Journal of applied physics
container_volume 72
creator JENKINS, D. W
DOW, J. D
MIN-HSIUNG TSAI
description
doi_str_mv 10.1063/1.352220
format article
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ispartof Journal of applied physics, 1992-11, Vol.72 (9), p.4130-4133
issn 0021-8979
1089-7550
language eng
recordid cdi_pascalfrancis_primary_4397924
source AIP Digital Archive
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
title N vacancies in AlxGa1-xN
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