The effect of DX centres on mobility in heavily doped n-GaAs calculated by Monte Carlo simulations

The hydrostatic pressure dependence of both the transport and quantum mobility observed in n-GaAs heavily doped with Si is calculated by taking into account spatial correlations due to Coulomb interactions. The only mechanism included in the calculations is ionized impurity scattering in which the c...

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Bibliographic Details
Published in:Semiconductor science and technology 1993-02, Vol.8 (2), p.211-218
Main Authors: Wel, P J van der, Anders, M J, Giling, L J, Kossut, J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
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Summary:The hydrostatic pressure dependence of both the transport and quantum mobility observed in n-GaAs heavily doped with Si is calculated by taking into account spatial correlations due to Coulomb interactions. The only mechanism included in the calculations is ionized impurity scattering in which the charged centres are ionized donors, occupied DX centres and ionized acceptors. The correlation functions that reflect the spatial correlations are obtained by Monte Carlo simulations which enable us to account for the DX freeze-out temperature. It is shown that it is possible to simulate absolute values of experimental mobility data up to 20 kbar for samples with different compensation ratios. The results confirm the negative-U model for DX centres.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/8/2/011