Field-extended field-effect transistors in 0.25-eV bandgap HgCdTe

A novel FET structure for use with 0.25-eV bandgap HgCdTe is described. The device, known as the field-extended field-effect transistor (FEFET), incorporates additional electrodes to control the surface electric field at the perimeter of the metallurgical diodes comprising the source and the drain o...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1993-03, Vol.40 (3), p.487-492
Main Authors: Wadsworth, M.V., Gooch, R.W.
Format: Article
Language:English
Subjects:
Applied sciences
Avalanche breakdown
Breakdown voltage
Electrodes
Electronics
Exact sciences and technology
FETs
Leakage current
MISFETs
Photonic band gap
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Subthreshold current
Temperature measurement
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A novel FET structure for use with 0.25-eV bandgap HgCdTe is described. The device, known as the field-extended field-effect transistor (FEFET), incorporates additional electrodes to control the surface electric field at the perimeter of the metallurgical diodes comprising the source and the drain of the transistor. Surrounding the metallurgical diodes with field-induced inversion regions improves the FEFET avalanche breakdown and subthreshold leakage characteristics as compared to standard MISFETs fabricated in HgCdTe. The FEFET is particularly attractive for switching applications or other uses requiring a high drain-to-source bias and a gate bias near the threshold potential.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.199351