Hafnium implanted in iron. I. Lattice location and annealing behaviour

Perturbed angular correlation, Rutherford backscattering and channelling experiments were conducted to study the lattice location and annealing behaviour of 110 keV Hf ions implanted into Fe single crystals. It was found that a fraction of 11-25% of the implanted Hf atoms are located at substitution...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 1993-04, Vol.5 (14), p.2171-2180
Main Authors: Bakker, J M G J de, Pleiter, F, Smulders, P J M
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in iii-v and ii-vi semiconductors
Exact sciences and technology
Metals. Metallurgy
Physics
Structure of solids and liquids
crystallography
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Summary:Perturbed angular correlation, Rutherford backscattering and channelling experiments were conducted to study the lattice location and annealing behaviour of 110 keV Hf ions implanted into Fe single crystals. It was found that a fraction of 11-25% of the implanted Hf atoms are located at substitutional sites in an undisturbed environment, while approx50% are located at irregular lattice sites. The remaining fraction are located at or near regular lattice sites in a perturbed local environment. Trapping and detrapping of monovacancies by substantial Hf atoms at 200 and 250K, respectively, as well as Hf precipitation during annealing at 873K was observed. The vacancy-Hf binding energy was determined to be E sub HV2 exp b = 0.17(3) eV.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/5/14/014