New ultra high-speed VUG-SIBH laser structure with 2 ps-RC product

A new all-MOVPE low-RC BH laser structure with semi-insulating (SI) InP layers was designed. This structure was designed to avoid a selective epitaxy step. The fabrication process consists of three MOVPE steps. An extremely low capacitance below 0.6 pF and a series resistance around 3 Omega ; (RC pr...

Full description

Saved in:
Bibliographic Details
Published in:Journal of lightwave technology 1992-12, Vol.10 (12), p.1935-1938
Main Authors: Kazmierski, C., Robein, D., Mathoorasing, D.
Format: Article
Language:English
Subjects:
Applied sciences
Bandwidth
Capacitance
Electronics
Epitaxial growth
Epitaxial layers
Exact sciences and technology
High speed optical techniques
Indium phosphide
Optical design
Optical device fabrication
Optical modulation
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ultraviolet sources
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A new all-MOVPE low-RC BH laser structure with semi-insulating (SI) InP layers was designed. This structure was designed to avoid a selective epitaxy step. The fabrication process consists of three MOVPE steps. An extremely low capacitance below 0.6 pF and a series resistance around 3 Omega ; (RC product
ISSN:0733-8724
1558-2213
DOI:10.1109/50.202815