Self-aligned AlGaAs/GaAs HBT with selectively regrown OMVPE emitter

A self-aligned HBT mesa fabrication process utilizing selective organometallic vapor phase epitaxy (OMVPE) is reported whereby the extrinsic base has been made considerably thicker than the intrinsic base, thus avoiding the conventional tradeoff between base resistance and base transit time. This te...

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Bibliographic Details
Published in:IEEE electron device letters 1993-06, Vol.14 (6), p.295-297
Main Authors: Enquist, P.M., Slater, D.B., Hutchby, J.A., Morris, A.S., Trew, R.J.
Format: Article
Language:English
Subjects:
Apertures
Applied sciences
Contact resistance
Delay
Electronics
Etching
Exact sciences and technology
Fabrication
Gallium arsenide
Heterojunction bipolar transistors
Ion implantation
Metallization
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Transistors
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Summary:A self-aligned HBT mesa fabrication process utilizing selective organometallic vapor phase epitaxy (OMVPE) is reported whereby the extrinsic base has been made considerably thicker than the intrinsic base, thus avoiding the conventional tradeoff between base resistance and base transit time. This technique also simplifies processing by eliminating the need for emitter isolation by etching or ion implantation prior to base metallization. Application of this process to AlGaAs/GaAs N-p-n HBTs has yielded an intrinsic to extrinsic base sheet resistance ratio of 1.5, an f/sub T/ of 22 GHz, and an f/sub max/ of 55 GHz.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.215203