Extrinsic base surface passivation in GaInP/GaAs heterojunction bipolar transistors

The authors demonstrate excellent passivation of the extrinsic base surfaces in GaInP/GaAs heterojunction bipolar transistors (HBTs) having small emitter areas. Passivated devices with an area as small as 4*20 mu m/sup 2/ exhibit the highest reported current gain value of 2690 for GaInP/GaAs HBTs, w...

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Bibliographic Details
Published in:IEEE electron device letters 1993-06, Vol.14 (6), p.301-303
Main Authors: Liu, W., Beam, E., Henderson, T., Fan, S.-K.
Format: Article
Language:English
Subjects:
Applied sciences
Current density
Current measurement
Degradation
Density measurement
Electronics
Exact sciences and technology
Gain measurement
Gallium arsenide
Gold
Heterojunction bipolar transistors
Molecular beam epitaxial growth
Passivation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The authors demonstrate excellent passivation of the extrinsic base surfaces in GaInP/GaAs heterojunction bipolar transistors (HBTs) having small emitter areas. Passivated devices with an area as small as 4*20 mu m/sup 2/ exhibit the highest reported current gain value of 2690 for GaInP/GaAs HBTs, while unpassivated 4*20- mu m/sup 2/ devices exhibit a current gain of only 500. Measured current gains as a function of collector current density are almost identical for devices with varying emitter widths of 4, 6, 8, 12, 16, and 100 mu m. The current gains are also nearly identical for devices with varying passivation ledge widths of 1, 2, 3, and 6 mu m. These results are contrasted with those of a previously published study reporting surface passivation for a GaInP/GaAs HBT with a large emitter area.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.215205